| PART |
Description |
Maker |
| STP43N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STP33N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P650-U260-WH P650-U180-WH P850-U180-WH P850-U260-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| CES2307 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AP2121AK-1.8TRE1 AP2121AK-2.5TRG1 AP2121AK-1.2TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CMPTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
| CMLTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
